R&D News
【Most Young Scholars Grant (Columbus Program)】Special Issue
By adopting the charge-plasma concept, dopingless FETs with metal-semiconductor (MS) and metal-insulator- semiconductor (MIS) contacts in parallel at the source/drain (SD) have been studied in this work. It is found that currents may be mainly pathing through the MIS contacts for a given SD metal workfunction when the insulator thickness is thin enough. In order to avoid the potential penalty ...